The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor.
نویسندگان
چکیده
A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
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ورودعنوان ژورنال:
- Chemical communications
دوره 50 31 شماره
صفحات -
تاریخ انتشار 2014